| PART |
Description |
Maker |
| FA5301 FA5301BP FA5301BPN FA5301BN |
Bipolar IC for switching power supplay control
Bipolar IC For Switching Power Supply Control
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| MJE18006-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| MJE18004 MJE18004G MJF18004 MJF18004G |
NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| MJE13007G-TA3-T MJE13007G-TF3-T MJE13007-TA3-T |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
UNISONIC TECHNOLOGIES CO LTD
|
| FA5311 FA5315P FA5315PS FA5310 FA5310BP FA5310BPS |
Bipolar IC For Switching Power Supply Control
|
FUJI[Fuji Electric]
COLLMER SEMICONDUCTOR INC
|
| GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| GT20D101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA
|
